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NSS1C201MZ4 100 V, 2.0 A, Low VCE(sat) NPN Transistor
ON Semiconductor's e 2 PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DC-DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU's control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers.
Feature
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100 VOLTS, 2.0 AMPS NPN LOW VCE(sat) TRANSISTOR
COLLECTOR 3 1 BASE 2 EMITTER
* These are Pb-Free Devices
MAXIMUM RATINGS (TA = 25C)
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Collector Current - Peak Symbol VCEO VCBO VEBO IC ICM Max 100 140 7.0 2.0 3.0 Unit Vdc Vdc Vdc A A A Y W 1C201 G
MARKING DIAGRAM
SOT-223 CASE 318E STYLE 1 AYW 1C201G 1
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Total Device Dissipation TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Total Device Dissipation (Single Pulse < 10 sec.) Junction and Storage Temperature Range Symbol PD (Note 1) Max 800 6.5 RqJA (Note 1) PD (Note 2) 155 2 15.6 RqJA (Note 2) PDsingle (Note 3) TJ, Tstg 64 710 -55 to +150 Unit mW mW/C C/W W mW/C C/W mW C
= Assembly Location = Year = Work Week = Specific Device Code = Pb-Free Package
PIN ASSIGNMENT
4 C
B 1
C 2
E 3
Top View Pinout
ORDERING INFORMATION
Device NSS1C201MZ4T1G NSS1C201MZ4T3G Package SOT-223 (Pb-Free) SOT-223 (Pb-Free) Shipping 1000/ Tape & Reel 4000/ Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-4 @ 7.6 mm2, 1 oz. copper traces. 2. FR-4 @ 645 mm2, 1 oz. copper traces. 3. Thermal response.
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NSS1C201MZ4/D
(c) Semiconductor Components Industries, LLC, 2008
November, 2008 - Rev. 0
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NSS1C201MZ4
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Collector -Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) Emitter -Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) Collector Cutoff Current (VCB = 140 Vdc, IE = 0) Emitter Cutoff Current (VEB = 6.0 Vdc) ON CHARACTERISTICS DC Current Gain (Note 4) (IC = 10 mA, VCE = 2.0 V) (IC = 500 mA, VCE = 2.0 V) (IC = 1.0 A, VCE = 2.0 V) (IC = 2.0 A, VCE = 2.0 V) Collector -Emitter Saturation Voltage (Note 4) (IC = 0.1 A, IB = 0.010 A) (IC = 0.5 A, IB = 0.050 A) (IC = 1.0 A, IB = 0.100 A) (IC = 2.0 A, IB = 0.200 A) Base -Emitter Saturation Voltage (Note 4) (IC = 1.0 A, IB = 0.100 A) Base -Emitter Turn-on Voltage (Note 4) (IC = 1.0 A, VCE = 2.0 V) Cutoff Frequency (IC = 100 mA, VCE = 5.0 V, f = 100 MHz) Input Capacitance (VEB = 0.5 V, f = 1.0 MHz) Output Capacitance (VCB = 3.0 V, f = 1.0 MHz) 4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2%. hFE 150 120 80 40 V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 100 140 7.0 100 50 Vdc Vdc Vdc nA nA Symbol Min Typ Max Unit
360
VCE(sat)
V 0.030 0.060 0.100 0.180 V 1.10 0.850 100 305 22 V MHz pF pF
VBE(sat) VBE(on) fT Cibo Cobo
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NSS1C201MZ4
0.60 PD, POWER DISSIPATINO (W) 0.50 0.40 0.30 0.20 0.10 0 0 20 40 60 80 100 120 140 Note 2 400 360 hRE, DC CURRENT GAIN 320 280 240 200 160 120 80 40 160 0 0.001 0.01 0.1 1 10 -55C 25C 150C VCE = 2 V
Note 1
TJ, TEMPERATURE (C)
IC, COLLECTOR CURRENT (A)
Figure 1. Power Derating
400 320 280 240 200 160 120 80 40 0 0.001 0.01 0.1 1 -55C 25C 150C VBE(sat), COLLECTOR-EMITTER SATURATOIN VOLTAGE (V) 360 hRE, DC CURRENT GAIN VCE = 4 V 1 IC /IB = 10
Figure 2. DC Current Gain
0.1 150C 25C -55C
10
0.01 0.001
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain
Figure 4. Collector-Emitter Saturation Voltage
1 VCE(sat), COLLECTOR-EMITTER SATURATOIN VOLTAGE (V) IC /IB = 20 VBE(sat), BASE-EMITTER SATURATOIN VOLTAGE (V)
1.4 1.2 1 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 150C IC /IB = 10
150C 25C -55C
0.1
25C -55C
0.01 0.001
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 5. Collector-Emitter Saturation Voltage
Figure 6. Base-Emitter Saturation Voltage
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NSS1C201MZ4
1.4 VBE(sat), BASE-EMITTER SATURATOIN VOLTAGE (V) 1.2 1 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 150C VBE(on), BASE-EMITTER VOLTAGE (V) IC /IB = 50 -55C 1.2 VCE = 2 V 1.0 0.8 0.6 0.4 0.2 0.0 0.001 150C -55C 25C
25C
10
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 7. Base-Emitter Saturation Voltage
1.00 VCE(sat), COLLECTOR-EMITTER SATURATOIN VOLTAGE (V) CIB, INPUT CAPACITANCE (pF) 0.5 A 1A IC = 0.1 A 0.10 2A 3A 400 350 300 250 200 150 100 50 0 0 1
Figure 8. Base-Emitter Voltage
TJ = 25C fTEST = 1 MHz
TJ = 25C 0.01 0.0001 0.001 0.01 0.1
1
2
3
4
5
6
7
8
IB, BASE CURRENT (A)
VEB, BASE-EMITTER VOLTAGE (V)
Figure 9. Collector Saturation Region
Figure 10. Input Capacitance
50 COB, OUTPUT CAPACITANCE (pF) 45 40 35 30 25 20 15 10 5 0 0 10 20 30 40 50 60 70 80 90 TJ = 25C fTEST = 1 MHz fTau, CURRENT GAIN BANDWIDTH (MHz)
120 100 80 60 40 20 0 0.001 TJ = 25C fTEST = 1 MHz VCE = 5 V
100
0.01
0.1
1
10
VCB, COLLECTOR BASE VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
Figure 11. Output Capacitance
Figure 12. Current Gain Bandwidth Product
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NSS1C201MZ4
10 IC, COLLECTOR CURRENT (A) 10 mS 1 Thermal Limit 0.1 100 mS
1 mS
0.01 0.1
1
10
100
VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 13. Safe Operating Area
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NSS1C201MZ4
PACKAGE DIMENSIONS
SOT-223 (TO-261) CASE 318E-04 ISSUE L
D b1
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A A1 b b1 c D E e e1 L1 HE MIN 1.50 0.02 0.60 2.90 0.24 6.30 3.30 2.20 0.85 1.50 6.70 0 MILLIMETERS NOM MAX 1.63 1.75 0.06 0.10 0.75 0.89 3.06 3.20 0.29 0.35 6.50 6.70 3.50 3.70 2.30 2.40 0.94 1.05 1.75 2.00 7.00 7.30 10 - MIN 0.060 0.001 0.024 0.115 0.009 0.249 0.130 0.087 0.033 0.060 0.264 0 INCHES NOM 0.064 0.002 0.030 0.121 0.012 0.256 0.138 0.091 0.037 0.069 0.276 - MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 0.078 0.287 10
4
HE
E
1 2 3
e1
b e A q L1 C
q
0.08 (0003)
A1
STYLE 1: PIN 1. 2. 3. 4.
BASE COLLECTOR EMITTER COLLECTOR
SOLDERING FOOTPRINT
3.8 0.15 2.0 0.079
2.3 0.091
2.3 0.091
6.3 0.248
2.0 0.079 1.5 0.059
mm inches
SCALE 6:1
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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NSS1C201MZ4/D

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